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Publication details

Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy

Journal Article

Walachová Jarmila, Zelinka Jiří, Malina Václav, Vaniš Jan, Šroubek Filip, Pangrác Jiří, Melichar Karel, Hulicius Eduard


serial: Applied Physics Letters vol.91, 4 (2007)

research: CEZ:AV0Z20670512

research: CEZ:AV0Z10750506

research: CEZ:AV0Z10100521

project(s): GA202/05/0242, GA ČR

keywords: quantum dots, ballistic transport, semiconductor heterojunctions

abstract (eng):

Self assembled InAs quantum dots in GaAs/GaAlAs structures were examined by ballistic electron emission microscopy/spectroscopy. The studied structures were grown by metal-organic chemical vapor deposition. Quantum dots with an image of elliptical shape were studied. Ballistic current-voltage characteristics through the quantum dot and outside the quantum dot are compared in the voltage range of 0,55 V to 2 V. In the voltage range from 0.55 V to 0.8 V examples of ballistic characteristics and their derivatives are given.

abstract (cze):

Pomocí balistické elektronové emisní mikroskopie/spektroskopie byly studovány samouspořádané InAs kvantové tečky v GaAs/GaAlAs heterostruktuře. Měřené struktury byly narosteny metalorganickou epitaxií. Byly studovány tečky s eliptickým obrazem. Jsou uvedeny příklady spektroskopických chrakteristik na a mimo kvantovou tečku v napěťovém rozsahu 0,55V až 2V. Dále jsou uvedeny příklady spektroskopických charakteristik s jejich derivacemi v napěťovém rozsahu 0,55V až 0,8V.

RIV: BM

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Last modification: 21.12.2012
Institute of Information Theory and Automation