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Publication details

Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as based electrode

Conference Paper (international conference)

Vaniš Jan, Chow D. H., Pangrác Jiří, Šroubek Filip, McGill T. C. M., Walachová Jarmila


serial: Proceedings 6th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies - EXMATEC'2002, p. 986-991 , Eds: Stutzmann M.

action: EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./, (Budapest, HU, 26.05.2002-29.05.2002)

project(s): KSK1010104, GA AV ČR

keywords: field emission electron microscopy, semiconductor quantum wells, spectroscopy

abstract (eng):

The characterization of InAs/AlSb double tunnel barrier heterostructure with the well thickness of 12nm and symmetric barrier thickness of 2nm by ballistic electron emission microscopy/spectroscopy is presented. For the measurements the top InAs layer of heterostructure is used as the base electrode.

abstract (cze):

Je prezentována charakterizace dvojité tunelové bariérové InAs/AlSb heterostruktury s šířkou jámy 12nm a symetrickými barierami tloušťky 2nm pomocí balistické elektronové emisní mikroskopie/spektroskopie. Jako bázová elektroda je použita vrchní InAs vrstva heterostruktury.

Cosati: 20E, 20K

RIV: BM

bocek: 2012-12-21 16:10