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Publication details

Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

Journal Article

Vaniš Jan, Zelinka Jiří, Malina Václav, Henini M., Pangrác Jiří, Melichar Karel, Hulicius Eduard, Šroubek Filip, Walachová Jarmila

serial: Microelectronics Journal vol.40, 3 (2009), p. 496-498

research: CEZ:AV0Z20670512

research: CEZ:AV0Z10100521

research: CEZ:AV0Z10750506

project(s): GA202/05/0242, GA ČR

keywords: quantum dots, ballistic transport, semiconductor heterojunction

abstract (eng):

Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current-voltage characteristics through the QD in the voltage range from 0.55 to 0.9 V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given. Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed.


2012-12-21 16:10