Institute of Information Theory and Automation

Publication details

Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

Journal Article

Walachová Jarmila, Zelinka Jiří, Leshkov Sergey, Šroubek Filip, Pangrác Jiří, Vaniš Jan


serial: Physica E: Low-Dimensional Systems and Nanostructures vol.48, 1 (2013), p. 61-65

research: CEZ:AV0Z10100521

project(s): GPP102/11/P824, GA ČR, GAP102/10/1201, GA ČR

keywords: quantum dots, scanning tunneling microscopy, ballistic transport

abstract (eng):

Density of states are studied by ballistic electron emission microscopy/spectroscopy on self-assembled InAs quantum dots embedded in GaAs/AlGaAs heterostructure prepared by metal-organic vapor phase epitaxy. For two lowest observed energy levels of quantum dot the density of states are mapped and correlated with the shape of quantum dot. Relation between inhomogeneous stress distribution in non symetrical quantum dots and the lowest energy level splitting was found.

RIV: JA

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Last modification: 21.12.2012
Institute of Information Theory and Automation